APT84F50L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Package / Case :

TO-264-3, TO-264AA

Rise Time :

70ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

50 ns

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.065Ohm

Continuous Drain Current (ID) :

84A

Pbfree Code :

yes

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Case Connection :

DRAIN

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

22 Weeks

Series :

POWER MOS 8™

RoHS Status :

RoHS Compliant

Terminal Finish :

PURE MATTE TIN

Pulsed Drain Current-Max (IDM) :

270A

Terminal Position :

Single

Packaging :

Tube

Power Dissipation-Max :

1135W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

155 ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Pin Count :

3

Rds On (Max) @ Id, Vgs :

65m Ω @ 42A, 10V

Turn On Delay Time :

60 ns

Published :

1997

Mount :

Through Hole

Number of Elements :

1

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V