APT84F50L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

PURE MATTE TIN

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

JESD-30 Code :

R-PSFM-T3

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Terminations :

3

Factory Lead Time :

22 Weeks

Mount :

Through Hole

Power Dissipation-Max :

1135W Tc

JESD-609 Code :

e3

Rise Time :

70ns

Series :

POWER MOS 8™

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

65m Ω @ 42A, 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Pulsed Drain Current-Max (IDM) :

270A

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

FET Type :

N-Channel

Continuous Drain Current (ID) :

84A

Pin Count :

3

Fall Time (Typ) :

50 ns

Package / Case :

TO-264-3, TO-264AA

Turn-Off Delay Time :

155 ns

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Mounting Type :

Through Hole

Published :

1997

Number of Elements :

1

Turn On Delay Time :

60 ns

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.065Ohm

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Position :

Single

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V