APT84F50B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Rise Time :

70ns

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

65m Ω @ 42A, 10V

Continuous Drain Current (ID) :

84A

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

Radiation Hardening :

No

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.065Ohm

JESD-609 Code :

e3

Turn-Off Delay Time :

155 ns

Number of Terminations :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

270A

Terminal Finish :

PURE MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1135W Tc

Mounting Type :

Through Hole

Fall Time (Typ) :

50 ns

Package / Case :

TO-247-3 Variant

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Terminal Position :

Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Factory Lead Time :

22 Weeks

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Series :

POWER MOS 8™

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Turn On Delay Time :

60 ns

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ