APT80M60J

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Chassis Mount, Screw

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Transistor Element Material :

SILICON

Fall Time (Typ) :

125 ns

Package / Case :

SOT-227-4, miniBLOC

Radiation Hardening :

No

Packaging :

Tube

Drain-source On Resistance-Max :

0.06Ohm

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Continuous Drain Current (ID) :

84A

Pin Count :

4

Current Rating :

80A

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 5mA

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

600V

Number of Pins :

4

Rise Time :

155ns

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Power Dissipation :

960W

FET Type :

N-Channel

Turn-Off Delay Time :

410 ns

Rds On (Max) @ Id, Vgs :

55m Ω @ 60A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

3350 mJ

Gate Charge (Qg) (Max) @ Vgs :

600nC @ 10V

Pbfree Code :

yes

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS 8™

Terminal Position :

UPPER

Number of Terminations :

4

Turn On Delay Time :

135 ns

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

960W Tc

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

19 Weeks

Terminal Form :

UNSPECIFIED

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated