APT80F60J
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- Mfr.Part #
- APT80F60J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 84A ISOTOP
- Stock
- 42,023
- In Stock ：
- 42,023
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Chassis Mount
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Published :
- 1997
- DS Breakdown Voltage-Min :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Pins :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 598nC @ 10V
- Factory Lead Time :
- 14 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 84A Tc
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Mount :
- Chassis Mount, Screw
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max :
- 961W Tc
- Terminal Position :
- UPPER
- Input Capacitance (Ciss) (Max) @ Vds :
- 23994pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 84A
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 408 ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Rise Time :
- 156ns
- Terminal Form :
- UNSPECIFIED
- Avalanche Energy Rating (Eas) :
- 3352 mJ
- Drain-source On Resistance-Max :
- 0.055Ohm
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 123 ns
- Radiation Hardening :
- No
- Turn On Delay Time :
- 134 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- POWER MOS 8™
- Pin Count :
- 4
- Datasheets
- APT80F60J
N-Channel Tube 55m Ω @ 60A, 10V ±30V 23994pF @ 25V 598nC @ 10V 600V SOT-227-4, miniBLOC
APT80F60J Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3352 mJ.The maximum input capacitance of this device is 23994pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 84A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 408 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 134 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APT80F60J Features
the avalanche energy rating (Eas) is 3352 mJ
a continuous drain current (ID) of 84A
the turn-off delay time is 408 ns
a 600V drain to source voltage (Vdss)
APT80F60J Applications
There are a lot of Microsemi Corporation
APT80F60J applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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