APT8075BN

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

POWER MOS IV®

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Power Dissipation-Max :

310W Tc

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.75Ohm

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

56A

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

800V

Vgs (Max) :

±30V

Terminal Position :

Single

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

DS Breakdown Voltage-Min :

800V

Number of Elements :

1

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Drain Current-Max (Abs) (ID) :

13A

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

750m Ω @ 6.5A, 10V

JEDEC-95 Code :

TO-247AD

Package / Case :

TO-247-3