APT8065BVRG
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- Mfr.Part #
- APT8065BVRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A TO247
- Stock
- 31,685
- In Stock ：
- 31,685
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Voltage - Rated DC :
- 800V
- Turn-Off Delay Time :
- 60 ns
- Mount :
- Through Hole
- Turn On Delay Time :
- 12 ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 12 ns
- Current Rating :
- 13A
- Continuous Drain Current (ID) :
- 13A
- Power Dissipation :
- 280W
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 650mOhm @ 500mA, 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-247 [B]
- Rise Time :
- 11ns
- Published :
- 1997
- Radiation Hardening :
- No
- Input Capacitance :
- 3.7nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- POWER MOS V®
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drain to Source Voltage (Vdss) :
- 800V
- RoHS Status :
- RoHS Compliant
- Datasheets
- APT8065BVRG
N-Channel Tube 650mOhm @ 500mA, 10V 3700pF @ 25V 225nC @ 10V 800V TO-247-3
APT8065BVRG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3700pF @ 25V.This device conducts a continuous drain current (ID) of 13A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 800V.
APT8065BVRG Features
a continuous drain current (ID) of 13A
the turn-off delay time is 60 ns
a 800V drain to source voltage (Vdss)
APT8065BVRG Applications
There are a lot of Microsemi Corporation
APT8065BVRG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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