APT75GP120JDQ3
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- Mfr.Part #
- APT75GP120JDQ3
- Manufacturer
- Microchip Technology
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- IGBT MOD 1200V 128A 543W ISOTOP
- Stock
- 44,173
- In Stock ：
- 44,173
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Modules
- IGBT Type :
- PT
- Power - Max :
- 543W
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Input Capacitance (Cies) @ Vce :
- 7.04nF @ 25V
- Configuration :
- Single
- Turn On Time :
- 60 ns
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Weight :
- 30.000004g
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Collector Current :
- 128A
- Collector Emitter Saturation Voltage :
- 3.3V
- Mounting Type :
- Chassis Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount, Screw
- Input Capacitance :
- 7.04nF
- Height :
- 9.6mm
- Max Power Dissipation :
- 543W
- Width :
- 25.4mm
- Package / Case :
- ISOTOP
- Additional Feature :
- LOW CONDUCTION LOSS, UL RECOGNIZED
- Current - Collector Cutoff (Max) :
- 1.25mA
- Published :
- 1999
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Series :
- POWER MOS 7®
- Input :
- Standard
- Terminal Position :
- UPPER
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Nom (toff) :
- 360 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Gate-Emitter Voltage-Max :
- 20V
- Factory Lead Time :
- 33 Weeks
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 75A
- NTC Thermistor :
- No
- Length :
- 38.2mm
- Pin Count :
- 4
- Transistor Application :
- Motor Control
- Datasheets
- APT75GP120JDQ3
APT75GP120JDQ3 datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
APT75GP120JDQ3 DESCRIPTION
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
APT75GP120JDQ3 FEATURES
• Low Conduction Loss
• 50 kHz operation @ 800V, 20A
• Low Gate Charge
• 20 kHz operation @ 800V, 44A
• Ultrafast Tail Current shutoff
APT75GP120JDQ3 APPLICATIONS
• CCD Clock for VTR Camera
• Equipment Connected to PCs
• Low Profile Equipment
• Computers and Peripherals
• Lower Cost Crystal Oscillator Replacement
• Portable Electronics (MP3 Players, Games)
• Consumer Electronics such as TV’s, DVR’s, etc.
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