APT75GN120J

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

NTC Thermistor :

No

Polarity/Channel Type :

N-Channel

Terminal Position :

UPPER

Collector Emitter Voltage (VCEO) :

1.2kV

Published :

2005

Case Connection :

Isolated

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

1200V

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Gate-Emitter Voltage-Max :

30V

Current - Collector Cutoff (Max) :

100μA

Number of Terminations :

4

IGBT Type :

Trench Field Stop

Package / Case :

ISOTOP

Turn On Time :

101 ns

RoHS Status :

RoHS Compliant

Number of Elements :

1

Configuration :

Single

Input Capacitance (Cies) @ Vce :

4.8nF @ 25V

Additional Feature :

High Reliability

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Input Capacitance :

4.8nF

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Input :

Standard

Pin Count :

4

Max Collector Current :

124A

Turn Off Time-Nom (toff) :

925 ns

Collector Emitter Breakdown Voltage :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

379W

Number of Pins :

4

Max Power Dissipation :

379W

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99