APT68GA60LD40

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Pin Count :

3

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Mount :

Through Hole

Input Type :

Standard

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

202A

Series :

POWER MOS 8™

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Gate Charge :

198nC

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

21ns/133ns

Case Connection :

COLLECTOR

Package / Case :

TO-264-3, TO-264AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Factory Lead Time :

25 Weeks

Power - Max :

520W

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

600V

Test Condition :

400V, 40A, 4.7 Ω, 15V

Packaging :

Tube

Radiation Hardening :

No

Max Power Dissipation :

520W

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Published :

1999

Turn Off Time-Nom (toff) :

304 ns

IGBT Type :

PT

Transistor Application :

POWER CONTROL

JESD-30 Code :

R-PSFM-T3

Additional Feature :

LOW CONDUCTION LOSS

Reverse Recovery Time :

22 ns

Switching Energy :

715μJ (on), 607μJ (off)

Max Collector Current :

121A

Turn On Time :

46 ns