APT68GA60B2D40
- Mfr.Part #
- APT68GA60B2D40
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- IGBT 600V 121A 520W TO-247
- Stock
- 43,517
- In Stock :
- 43,517
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Transistor Application :
- POWER CONTROL
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-247AD
- Number of Pins :
- 3
- Element Configuration :
- Single
- Max Collector Current :
- 121A
- Additional Feature :
- LOW CONDUCTION LOSS
- Test Condition :
- 400V, 40A, 4.7 Ω, 15V
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Power - Max :
- 520W
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- 21ns/133ns
- Gate Charge :
- 198nC
- IGBT Type :
- PT
- Factory Lead Time :
- 25 Weeks
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Turn Off Time-Nom (toff) :
- 304 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 40A
- Switching Energy :
- 715μJ (on), 607μJ (off)
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 46 ns
- Series :
- POWER MOS 8™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 600V
- Published :
- 1999
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Current - Collector Pulsed (Icm) :
- 202A
- Max Power Dissipation :
- 520W
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3 Variant
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Datasheets
- APT68GA60B2D40
APT68GA60B2D40 datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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