APT68GA60B2D40

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Turn On Time :

46 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Power - Max :

520W

Turn Off Time-Nom (toff) :

304 ns

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-609 Code :

e1

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Test Condition :

400V, 40A, 4.7 Ω, 15V

Published :

1999

Series :

POWER MOS 8™

Qualification Status :

Not Qualified

Case Connection :

COLLECTOR

Package / Case :

TO-247-3 Variant

Gate Charge :

198nC

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Factory Lead Time :

25 Weeks

Current - Collector Pulsed (Icm) :

202A

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

21ns/133ns

JEDEC-95 Code :

TO-247AD

Pbfree Code :

yes

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Additional Feature :

LOW CONDUCTION LOSS

Max Collector Current :

121A

RoHS Status :

RoHS Compliant

Input Type :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

520W

IGBT Type :

PT

Collector Emitter Voltage (VCEO) :

2.5V

Transistor Application :

POWER CONTROL

Number of Elements :

1

Mount :

Through Hole

Number of Pins :

3

Switching Energy :

715μJ (on), 607μJ (off)