APT45GP120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

3.3V

Number of Terminations :

3

Terminal Finish :

TIN SILVER COPPER

Turn On Time :

47 ns

IGBT Type :

PT

Element Configuration :

Single

Lead Free :

Lead Free

Current Rating :

100A

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

1.2kV

Width :

16.26mm

Turn Off Time-Nom (toff) :

230 ns

Height :

5.31mm

JESD-30 Code :

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 45A

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

100A

Package / Case :

TO-247-3

Continuous Collector Current :

100A

Pbfree Code :

yes

Pin Count :

3

Voltage - Rated DC :

1.2kV

Mount :

Through Hole

Input Type :

Standard

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

18ns/102ns

Length :

21.46mm

Factory Lead Time :

23 Weeks

Test Condition :

600V, 45A, 5 Ω, 15V

Series :

POWER MOS 7®

JEDEC-95 Code :

TO-247AD

Number of Elements :

1

Switching Energy :

900μJ (on), 904μJ (off)

Weight :

38.000013g

Case Connection :

COLLECTOR

Published :

1999

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Additional Feature :

LOW CONDUCTION LOSS

Mounting Type :

Through Hole

Max Power Dissipation :

625W

Transistor Element Material :

SILICON

Gate Charge :

185nC

Collector Emitter Voltage (VCEO) :

1.2kV

Current - Collector Pulsed (Icm) :

170A

Packaging :

Tube