APT45GP120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Published :

1999

Test Condition :

600V, 45A, 5 Ω, 15V

Td (on/off) @ 25°C :

18ns/102ns

Number of Terminations :

3

Gate Charge :

185nC

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 45A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Element Configuration :

Single

Weight :

38.000013g

RoHS Status :

RoHS Compliant

Continuous Collector Current :

100A

Collector Emitter Voltage (VCEO) :

1.2kV

Series :

POWER MOS 7®

Mount :

Through Hole

Voltage - Rated DC :

1.2kV

JESD-30 Code :

R-PSFM-T3

Height :

5.31mm

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

1.2kV

Turn On Time :

47 ns

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

230 ns

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Length :

21.46mm

Transistor Element Material :

SILICON

Additional Feature :

LOW CONDUCTION LOSS

IGBT Type :

PT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

JESD-609 Code :

e1

Pin Count :

3

Collector Emitter Saturation Voltage :

3.3V

JEDEC-95 Code :

TO-247AD

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

170A

Max Collector Current :

100A

Max Power Dissipation :

625W

Switching Energy :

900μJ (on), 904μJ (off)

Input Type :

Standard

Pbfree Code :

yes

Number of Elements :

1

Factory Lead Time :

23 Weeks

Current Rating :

100A

Packaging :

Tube

Terminal Finish :

TIN SILVER COPPER

Width :

16.26mm