APT44GA60BD30

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Element Configuration :

Single

Switching Energy :

409μJ (on), 258μJ (off)

Package / Case :

TO-247-3

Gate-Emitter Voltage-Max :

30V

IGBT Type :

PT

Gate Charge :

128nC

Series :

POWER MOS 8™

Max Power Dissipation :

337W

Max Collector Current :

78A

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

600V

Terminal Finish :

TIN SILVER COPPER

Mount :

Through Hole

Td (on/off) @ 25°C :

16ns/84ns

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

130A

JESD-609 Code :

e1

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 26A

Pin Count :

3

Number of Elements :

1

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

208 ns

Turn On Time :

29 ns

Factory Lead Time :

29 Weeks

Power - Max :

337W

Transistor Application :

POWER CONTROL

RoHS Status :

RoHS Compliant

Published :

1999

Mounting Type :

Through Hole

Radiation Hardening :

No

Test Condition :

400V, 26A, 4.7 Ω, 15V

Number of Terminations :

3

Gate-Emitter Thr Voltage-Max :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)