APT43GA90BD30

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Turn On Time :

28 ns

Turn Off Time-Nom (toff) :

246 ns

Transistor Application :

POWER CONTROL

Gate Charge :

116nC

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Max Collector Current :

78A

Radiation Hardening :

No

Continuous Collector Current :

78A

Transistor Element Material :

SILICON

Packaging :

Tube

Mounting Type :

Through Hole

Number of Elements :

1

Factory Lead Time :

25 Weeks

Height :

5.31mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Element Configuration :

Single

Test Condition :

600V, 25A, 4.7 Ω, 15V

Pin Count :

3

Collector Emitter Saturation Voltage :

2.5V

Length :

21.46mm

Switching Energy :

875μJ (on), 425μJ (off)

Weight :

38.000013g

Max Power Dissipation :

337W

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

900V

Current - Collector Pulsed (Icm) :

129A

Package / Case :

TO-247-3

Additional Feature :

LOW CONDUCTION LOSS

IGBT Type :

PT

Published :

1999

Td (on/off) @ 25°C :

12ns/82ns

Input Type :

Standard

Terminal Finish :

Pure Matte Tin (Sn)

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 47A

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Collector Emitter Voltage (VCEO) :

900V

Width :

16.26mm