APT40GP60B2DQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

IGBT Type :

PT

Package / Case :

TO-247-3 Variant

Transistor Element Material :

SILICON

Turn On Time :

49 ns

Number of Pins :

3

Max Collector Current :

100A

Test Condition :

400V, 40A, 5 Ω, 15V

Max Power Dissipation :

543W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection :

COLLECTOR

Current Rating :

40A

Series :

POWER MOS 7®

Pin Count :

3

Number of Terminations :

3

Mount :

Through Hole

Factory Lead Time :

15 Weeks

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Power - Max :

543W

Voltage - Rated DC :

600V

Gate-Emitter Thr Voltage-Max :

6V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 40A

JESD-609 Code :

e1

Current - Collector Pulsed (Icm) :

160A

Td (on/off) @ 25°C :

20ns/64ns

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

600V

Gate Charge :

135nC

Mounting Type :

Through Hole

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

160 ns

Transistor Application :

POWER CONTROL

Additional Feature :

LOW CONDUCTION LOSS

Gate-Emitter Voltage-Max :

20V

Operating Temperature :

-55°C~150°C TJ

Switching Energy :

385μJ (on), 350μJ (off)

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V