APT36GA60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

109A

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

102nC

Gate-Emitter Voltage-Max :

30V

Factory Lead Time :

29 Weeks

Terminal Finish :

PURE MATTE TIN

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

6V

Pin Count :

3

Published :

1999

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Through Hole

Turn On Time :

29 ns

Mount :

Through Hole

Series :

POWER MOS 8™

Collector Emitter Voltage (VCEO) :

600V

Additional Feature :

LOW CONDUCTION LOSS

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

JESD-609 Code :

e3

Element Configuration :

Single

Transistor Element Material :

SILICON

Test Condition :

400V, 20A, 10 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

PT

Max Collector Current :

65A

Radiation Hardening :

No

Max Power Dissipation :

290W

Power - Max :

290W

Case Connection :

COLLECTOR

Package / Case :

TO-247-3

Number of Terminations :

3

Switching Energy :

307μJ (on), 254μJ (off)

Number of Elements :

1

Td (on/off) @ 25°C :

16ns/122ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

JEDEC-95 Code :

TO-247AD

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

Packaging :

Tube

Input Type :

Standard

Turn Off Time-Nom (toff) :

262 ns