APT35GT120JU2

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Voltage (VCEO) :

2.1V

ECCN Code :

EAR99

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 35A

Configuration :

Single

Terminal Form :

UNSPECIFIED

Number of Elements :

1

Mount :

Chassis Mount, Screw

Pin Count :

4

NTC Thermistor :

No

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input Capacitance :

2.53nF

Current - Collector Cutoff (Max) :

5mA

Polarity/Channel Type :

N-Channel

Input :

Standard

Turn On Time :

135 ns

Additional Feature :

AVALANCHE RATED, LOW CONDUCTION LOSS

IGBT Type :

Trench Field Stop

Mounting Type :

Chassis Mount

Max Power Dissipation :

260W

Turn Off Time-Nom (toff) :

610 ns

Factory Lead Time :

36 Weeks

Gate-Emitter Voltage-Max :

20V

Number of Terminations :

4

RoHS Status :

RoHS Compliant

Transistor Application :

POWER CONTROL

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Input Capacitance (Cies) @ Vce :

2.53nF @ 25V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

ISOTOP

Collector Emitter Breakdown Voltage :

1.2kV

Terminal Position :

UPPER

Power - Max :

260W

Max Collector Current :

55A

Case Connection :

Isolated