APT18M80S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

DS Breakdown Voltage-Min :

800V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Avalanche Energy Rating (Eas) :

795 mJ

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

530m Ω @ 9A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

19A

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

70A

JESD-609 Code :

e3

Packaging :

Bulk

Series :

POWER MOS 8™

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Terminal Finish :

PURE MATTE TIN

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

500W Tc

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

3760pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

245

Drain-source On Resistance-Max :

0.53Ohm

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING