APT18M80B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Mount :

Through Hole

Rise Time :

31ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Turn-Off Delay Time :

95 ns

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

70A

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

500W

Packaging :

Tube

Number of Terminations :

3

Published :

1997

Current Rating :

18A

Fall Time (Typ) :

27 ns

Case Connection :

DRAIN

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

795 mJ

ECCN Code :

EAR99

Terminal Position :

Single

Voltage - Rated DC :

800V

Drain-source On Resistance-Max :

0.53Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3760pF @ 25V

Turn On Delay Time :

21 ns

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

19A

Lead Free :

Lead Free

Power Dissipation-Max :

500W Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Series :

POWER MOS 8™

Rds On (Max) @ Id, Vgs :

530m Ω @ 9A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Pin Count :

3

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)