APT18M80B
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- Mfr.Part #
- APT18M80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 19A TO247
- Stock
- 45,351
- In Stock ：
- 45,351
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 21 ns
- Power Dissipation :
- 500W
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 27 ns
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.53Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 795 mJ
- Mounting Type :
- Through Hole
- Series :
- POWER MOS 8™
- Voltage - Rated DC :
- 800V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3760pF @ 25V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 95 ns
- Published :
- 1997
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 31ns
- Packaging :
- Tube
- Current Rating :
- 18A
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 70A
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 9A, 10V
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 500W Tc
- Continuous Drain Current (ID) :
- 19A
- Datasheets
- APT18M80B
N-Channel Tube 530m Ω @ 9A, 10V ±30V 3760pF @ 25V 120nC @ 10V TO-247-3
APT18M80B Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 795 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3760pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 95 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 21 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT18M80B Features
the avalanche energy rating (Eas) is 795 mJ
a continuous drain current (ID) of 19A
the turn-off delay time is 95 ns
based on its rated peak drain current 70A.
APT18M80B Applications
There are a lot of Microsemi Corporation
APT18M80B applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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