APT18F60S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Pins :

3

Terminal Finish :

PURE MATTE TIN

Packaging :

Tube

Series :

POWER MOS 8™

Mount :

Surface Mount

DS Breakdown Voltage-Min :

600V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

5V @ 1mA

Qualification Status :

Not Qualified

Number of Terminations :

2

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

495 mJ

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

65A

Pin Count :

3

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

370m Ω @ 9A, 10V

Peak Reflow Temperature (Cel) :

245

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

335W

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

335W Tc

FET Type :

N-Channel

Published :

1997

Continuous Drain Current (ID) :

19A

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Vgs (Max) :

±30V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Number of Elements :

1