APT18F60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

600V

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

335W

Turn On Delay Time :

20 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Published :

1997

Packaging :

Tube

Lead Free :

Lead Free

Case Connection :

DRAIN

Power Dissipation-Max :

335W Tc

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Vgs (Max) :

±30V

Pin Count :

3

Avalanche Energy Rating (Eas) :

495 mJ

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.37Ohm

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Turn-Off Delay Time :

60 ns

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

65A

Number of Terminations :

3

Rise Time :

23ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Fall Time (Typ) :

18 ns

Vgs(th) (Max) @ Id :

5V @ 1mA

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Mounting Type :

Through Hole

Current Rating :

18A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

19A

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

390m Ω @ 9A, 10V

Terminal Position :

Single

Pbfree Code :

yes