APT18F60B
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- Mfr.Part #
- APT18F60B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 19A TO247
- Stock
- 42,024
- In Stock ：
- 42,024
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Mount :
- Through Hole
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Rise Time :
- 23ns
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Voltage - Rated DC :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 495 mJ
- FET Type :
- N-Channel
- Published :
- 1997
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 19A
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 9A, 10V
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.37Ohm
- Pulsed Drain Current-Max (IDM) :
- 65A
- Power Dissipation :
- 335W
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 335W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current Rating :
- 18A
- Pin Count :
- 3
- Turn-Off Delay Time :
- 60 ns
- Fall Time (Typ) :
- 18 ns
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 20 ns
- Number of Elements :
- 1
- Datasheets
- APT18F60B
N-Channel Tube 390m Ω @ 9A, 10V ±30V 3550pF @ 25V 90nC @ 10V TO-247-3
APT18F60B Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 495 mJ.A device's maximal input capacitance is 3550pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 19A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 65A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
APT18F60B Features
the avalanche energy rating (Eas) is 495 mJ
a continuous drain current (ID) of 19A
the turn-off delay time is 60 ns
based on its rated peak drain current 65A.
APT18F60B Applications
There are a lot of Microsemi Corporation
APT18F60B applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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