APT17N80BC3G
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- Mfr.Part #
- APT17N80BC3G
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 17A TO247-3
- Stock
- 47,817
- In Stock ：
- 47,817
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 51A
- Current Rating :
- 17A
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- TIN SILVER COPPER
- Number of Elements :
- 1
- Voltage - Rated DC :
- 800V
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 11A, 10V
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 17A
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- CoolMOS™
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Published :
- 2004
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 208W Tc
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.29Ohm
- Number of Terminations :
- 3
- Datasheets
- APT17N80BC3G
N-Channel Tube 290m Ω @ 11A, 10V ±20V 2250pF @ 25V 90nC @ 10V TO-247-3
APT17N80BC3G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 670 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2250pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 51A.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT17N80BC3G Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 17A
based on its rated peak drain current 51A.
APT17N80BC3G Applications
There are a lot of Microsemi Corporation
APT17N80BC3G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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