APT17F80S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

797 mJ

Series :

POWER MOS 8™

Drain-source On Resistance-Max :

0.58Ohm

Qualification Status :

Not Qualified

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

245

Factory Lead Time :

5 Weeks

Mount :

Surface Mount

Power Dissipation-Max :

500W Tc

DS Breakdown Voltage-Min :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

580m Ω @ 9A, 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

70A

Number of Terminations :

2

Pbfree Code :

yes

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

3757pF @ 25V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Terminal Finish :

PURE MATTE TIN

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Continuous Drain Current (ID) :

18A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drain to Source Voltage (Vdss) :

800V

Number of Elements :

1

Published :

1997

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE