APT17F80S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

5 Weeks

RoHS Status :

RoHS Compliant

Packaging :

Tube

Vgs (Max) :

±30V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3757pF @ 25V

Peak Reflow Temperature (Cel) :

245

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Case Connection :

DRAIN

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drain-source On Resistance-Max :

0.58Ohm

Rds On (Max) @ Id, Vgs :

580m Ω @ 9A, 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

800V

Continuous Drain Current (ID) :

18A

FET Type :

N-Channel

Power Dissipation-Max :

500W Tc

Terminal Form :

Gull wing

Series :

POWER MOS 8™

Drain to Source Voltage (Vdss) :

800V

Pulsed Drain Current-Max (IDM) :

70A

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Finish :

PURE MATTE TIN

Avalanche Energy Rating (Eas) :

797 mJ

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Published :

1997

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Pbfree Code :

yes