APT17F80B
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- Mfr.Part #
- APT17F80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 18A TO247
- Stock
- 35,220
- In Stock ：
- 35,220
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 18A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3757pF @ 25V
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 797 mJ
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 800V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.58Ohm
- Published :
- 1997
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 70A
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 580m Ω @ 9A, 10V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Fall Time (Typ) :
- 27 ns
- Current Rating :
- 17A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 31ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- POWER MOS 8™
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-247AD
- Power Dissipation-Max :
- 500W Tc
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 500W
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 93 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 122nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Turn On Delay Time :
- 21 ns
- Datasheets
- APT17F80B
N-Channel Tube 580m Ω @ 9A, 10V ±30V 3757pF @ 25V 122nC @ 10V TO-247-3
APT17F80B Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 797 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3757pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.It is [93 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 70A.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT17F80B Features
the avalanche energy rating (Eas) is 797 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 93 ns
based on its rated peak drain current 70A.
APT17F80B Applications
There are a lot of Microsemi Corporation
APT17F80B applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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