APT17F80B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Fall Time (Typ) :

27 ns

Voltage - Rated DC :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

797 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

3757pF @ 25V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 1mA

Pin Count :

3

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.58Ohm

Pbfree Code :

yes

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Continuous Drain Current (ID) :

18A

Power Dissipation-Max :

500W Tc

Lead Free :

Lead Free

Current Rating :

17A

Published :

1997

Power Dissipation :

500W

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

580m Ω @ 9A, 10V

JEDEC-95 Code :

TO-247AD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

70A

Case Connection :

DRAIN

Turn On Delay Time :

21 ns

Number of Terminations :

3

Transistor Element Material :

SILICON

Series :

POWER MOS 8™

Turn-Off Delay Time :

93 ns

Factory Lead Time :

8 Weeks

Rise Time :

31ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

TO-247-3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3