APT17F100S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

68A

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation-Max :

625W Tc

Power Dissipation :

625W

Vgs (Max) :

±30V

Number of Terminations :

2

FET Type :

N-Channel

Mount :

Surface Mount

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Drain-source On Resistance-Max :

0.8Ohm

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Pin Count :

3

Pbfree Code :

yes

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Series :

POWER MOS 8™

Drain to Source Voltage (Vdss) :

1000V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Number of Pins :

3

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id :

5V @ 1mA

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

780m Ω @ 9A, 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4845pF @ 25V

Continuous Drain Current (ID) :

17A

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

245

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Finish :

Pure Matte Tin (Sn)

Published :

1997