APT17F100S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

625W

ECCN Code :

EAR99

Series :

POWER MOS 8™

Drain-source On Resistance-Max :

0.8Ohm

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 1mA

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Pins :

3

Mounting Type :

Surface Mount

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

780m Ω @ 9A, 10V

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Number of Terminations :

2

Mount :

Surface Mount

Power Dissipation-Max :

625W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4845pF @ 25V

Terminal Finish :

Pure Matte Tin (Sn)

Radiation Hardening :

No

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Peak Reflow Temperature (Cel) :

245

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

68A

Case Connection :

DRAIN

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current (ID) :

17A

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Mode :

ENHANCEMENT MODE