APT17F100B
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- Mfr.Part #
- APT17F100B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 17A TO247
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 1997
- Number of Elements :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Power Dissipation-Max :
- 625W Tc
- Power Dissipation :
- 625W
- Length :
- 21.46mm
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 105 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Height :
- 5.31mm
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 22 Weeks
- Drain to Source Voltage (Vdss) :
- 1000V
- Pin Count :
- 3
- Current Rating :
- 17A
- Rise Time :
- 31ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- HIGH RELIABILITY, AVALANCHE RATED
- Fall Time (Typ) :
- 28 ns
- Mounting Type :
- Through Hole
- Width :
- 16.26mm
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 68A
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- JESD-30 Code :
- R-PSFM-T3
- Turn On Delay Time :
- 29 ns
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Weight :
- 38.000013g
- JEDEC-95 Code :
- TO-247AB
- Voltage - Rated DC :
- 1kV
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 17A
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.8Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4845pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 9A, 10V
- Datasheets
- APT17F100B
N-Channel Tube 800m Ω @ 9A, 10V ±30V 4845pF @ 25V 150nC @ 10V 1000V TO-247-3
APT17F100B Overview
A device's maximum input capacitance is 4845pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 17A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 105 ns.Its maximum pulsed drain current is 68A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 29 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT17F100B Features
a continuous drain current (ID) of 17A
the turn-off delay time is 105 ns
based on its rated peak drain current 68A.
a 1000V drain to source voltage (Vdss)
APT17F100B Applications
There are a lot of Microsemi Corporation
APT17F100B applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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