APT15F60S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Series :

POWER MOS 8™

Power Dissipation-Max :

290W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Pulsed Drain Current-Max (IDM) :

54A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Pin Count :

3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

405 mJ

Packaging :

Tube

Number of Elements :

1

Drain-source On Resistance-Max :

0.43Ohm

FET Type :

N-Channel

Continuous Drain Current (ID) :

16A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

430m Ω @ 7A, 10V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

16A Tc

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2882pF @ 25V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 500µA

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Surface Mount