APT14M120B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4765pF @ 25V

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Number of Elements :

1

Length :

21.46mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Width :

16.26mm

Fall Time (Typ) :

24 ns

JESD-609 Code :

e1

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Drain to Source Voltage (Vdss) :

1200V

Turn-Off Delay Time :

85 ns

Power Dissipation-Max :

625W Tc

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 7A, 10V

Factory Lead Time :

18 Weeks

Current Rating :

14A

Vgs(th) (Max) @ Id :

5V @ 1mA

Weight :

38.000013g

Number of Terminations :

3

Continuous Drain Current (ID) :

14A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Height :

5.31mm

Case Connection :

DRAIN

Pbfree Code :

yes

Voltage - Rated DC :

1.2kV

Radiation Hardening :

No

ECCN Code :

EAR99

Turn On Delay Time :

26 ns

Power Dissipation :

625W

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-247AD

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

1997

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

1.2kV

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Transistor Element Material :

SILICON