APT14M100S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.88Ohm

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

14A

Terminal Form :

Gull wing

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Additional Feature :

AVALANCHE RATED

Power Dissipation :

500W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Pure Matte Tin (Sn)

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

55A

Avalanche Energy Rating (Eas) :

875 mJ

Rds On (Max) @ Id, Vgs :

880m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

1000V

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

3965pF @ 25V

Power Dissipation-Max :

500W Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Position :

Single

FET Type :

N-Channel

Number of Terminations :

2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

POWER MOS 8™

Number of Pins :

3