APT14M100B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3965pF @ 25V

Factory Lead Time :

18 Weeks

Pulsed Drain Current-Max (IDM) :

55A

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

95 ns

JESD-609 Code :

e1

ECCN Code :

EAR99

Terminal Position :

Single

Pin Count :

3

Vgs (Max) :

±30V

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

900m Ω @ 7A, 10V

Height :

5.31mm

Transistor Application :

SWITCHING

Voltage - Rated DC :

1kV

Length :

21.46mm

Current Rating :

14A

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

POWER MOS 8™

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

28 ns

Power Dissipation :

500W

Fall Time (Typ) :

26 ns

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

1kV

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Avalanche Energy Rating (Eas) :

875 mJ

Weight :

38.000013g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

14A

Rise Time :

29ns

Number of Terminations :

3

Power Dissipation-Max :

500W Tc

Mounting Type :

Through Hole

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Drain to Source Voltage (Vdss) :

1000V

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

0.88Ohm

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Width :

16.26mm

Mount :

Through Hole