APT14F100B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

14A

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-247AD

Turn On Delay Time :

28 ns

Published :

1997

Drain-source On Resistance-Max :

0.98Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Rise Time :

29ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 1mA

Continuous Drain Current (ID) :

14A

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Turn-Off Delay Time :

95 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Fall Time (Typ) :

26 ns

Power Dissipation :

500W

Series :

POWER MOS 8™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Contact Plating :

Tin

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

56A

Input Capacitance (Ciss) (Max) @ Vds :

3965pF @ 25V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

980m Ω @ 7A, 10V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Voltage - Rated DC :

1kV

Vgs (Max) :

±30V

Power Dissipation-Max :

500W Tc

Factory Lead Time :

22 Weeks

Avalanche Energy Rating (Eas) :

875 mJ

Pin Count :

3

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Drain to Source Voltage (Vdss) :

1000V

Package / Case :

TO-247-3

Mount :

Through Hole