APT14F100B
- Mfr.Part #
- APT14F100B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 14A TO247
- Stock
- 36,661
- In Stock :
- 36,661
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 56A
- Drain-source On Resistance-Max :
- 0.98Ohm
- Turn On Delay Time :
- 28 ns
- Series :
- POWER MOS 8™
- Continuous Drain Current (ID) :
- 14A
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 500W Tc
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 980m Ω @ 7A, 10V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-247AD
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Power Dissipation :
- 500W
- Mount :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 875 mJ
- Published :
- 1997
- Fall Time (Typ) :
- 26 ns
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 95 ns
- Factory Lead Time :
- 22 Weeks
- Current Rating :
- 14A
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 1kV
- Contact Plating :
- Tin
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3965pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Rise Time :
- 29ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Datasheets
- APT14F100B

N-Channel Tube 980m Ω @ 7A, 10V ±30V 3965pF @ 25V 120nC @ 10V 1000V TO-247-3
APT14F100B Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 875 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3965pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 95 ns.Peak drain current for this device is 56A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 28 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
APT14F100B Features
the avalanche energy rating (Eas) is 875 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 95 ns
based on its rated peak drain current 56A.
a 1000V drain to source voltage (Vdss)
APT14F100B Applications
There are a lot of Microsemi Corporation
APT14F100B applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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