APT13F120B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

21.46mm

Voltage - Rated DC :

1.2kV

Continuous Drain Current (ID) :

14A

Terminal Finish :

Tin (Sn)

Pin Count :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4765pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

13A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

50A

Mounting Type :

Through Hole

Number of Terminations :

3

Power Dissipation-Max :

625W Tc

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 1mA

Package / Case :

TO-247-3

Weight :

38.000013g

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 7A, 10V

Rise Time :

15ns

Resistance :

1.2Ohm

Factory Lead Time :

22 Weeks

Packaging :

Tube

Turn-Off Delay Time :

85 ns

Vgs (Max) :

±30V

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-247AB

Turn On Delay Time :

26 ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

1

Height :

5.31mm

Drain to Source Voltage (Vdss) :

1200V

Gate to Source Voltage (Vgs) :

30V

Width :

16.26mm

Terminal Position :

Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

24 ns

Operating Temperature :

-55°C~150°C TJ

Published :

1997

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Power Dissipation :

625W