APT12M80B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Lead Free :

Lead Free

Vgs (Max) :

±30V

Terminal Position :

Single

Case Connection :

DRAIN

Power Dissipation :

335W

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

800m Ω @ 6A, 10V

Fall Time (Typ) :

18 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 1mA

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

800V

Transistor Element Material :

SILICON

Power Dissipation-Max :

335W Tc

Mounting Type :

Through Hole

Turn-Off Delay Time :

60 ns

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2470pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

45A

Rise Time :

20ns

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

14 ns

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Series :

POWER MOS 8™

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Continuous Drain Current (ID) :

13A

Factory Lead Time :

22 Weeks

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

JEDEC-95 Code :

TO-247AD

Drain-source On Resistance-Max :

0.8Ohm

Number of Terminations :

3

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

525 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Finish :

TIN SILVER COPPER

Pin Count :

3

Current Rating :

12A