APT12F60K

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pin Count :

3

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

305 mJ

Number of Elements :

1

Continuous Drain Current (ID) :

12A

Terminal Finish :

Pure Matte Tin (Sn)

Package / Case :

TO-220-3

Published :

2011

Fall Time (Typ) :

11 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Voltage - Rated DC :

600V

Lead Free :

Lead Free

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation :

255W

Current Rating :

12A

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Number of Terminations :

3

Packaging :

Tube

Drain-source On Resistance-Max :

0.62Ohm

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

37 ns

Rds On (Max) @ Id, Vgs :

620m Ω @ 6A, 10V

Radiation Hardening :

No

Rise Time :

14ns

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Power Dissipation-Max :

225W Tc