APT12080JVR
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- Mfr.Part #
- APT12080JVR
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 15A ISOTOP
- Stock
- 4,285
- In Stock ：
- 4,285
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 485nC @ 10V
- Published :
- 1999
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 1200V
- Rise Time :
- 12ns
- ECCN Code :
- EAR99
- Mount :
- Screw
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 7800pF @ 25V
- Additional Feature :
- UL RECOGNIZED
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Power Dissipation-Max :
- 450W Tc
- Drain-source On Resistance-Max :
- 0.8Ohm
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- UPPER
- Continuous Drain Current (ID) :
- 15A
- Fall Time (Typ) :
- 12 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- JESD-30 Code :
- R-PUFM-X4
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- POWER MOS V®
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 1200V
- Pbfree Code :
- yes
- Mounting Type :
- Chassis Mount
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Number of Terminations :
- 4
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 7.5A, 10V
- Turn On Delay Time :
- 16 ns
- Terminal Form :
- UNSPECIFIED
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 59 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT12080JVR
APT12080JVR Documents
N-Channel Tube 800m Ω @ 7.5A, 10V ±30V 7800pF @ 25V 485nC @ 10V 1200V SOT-227-4, miniBLOC
APT12080JVR Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 15A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 59 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
APT12080JVR Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 59 ns
based on its rated peak drain current 60A.
a 1200V drain to source voltage (Vdss)
APT12080JVR Applications
There are a lot of Microsemi Corporation
APT12080JVR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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