APT1201R4BFLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1200V

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

11 ns

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 4.5A, 10V

Number of Elements :

1

Turn-Off Delay Time :

27 ns

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

9A

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Power Dissipation-Max :

300W Tc

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-247AD

Current Rating :

9A

Rise Time :

5ns

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

9A

Lead Free :

Lead Free

Turn On Delay Time :

8 ns

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Factory Lead Time :

34 Weeks

Transistor Element Material :

SILICON

Voltage - Rated DC :

1.2kV

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

36A

Series :

POWER MOS 7®

Pbfree Code :

yes

Case Connection :

DRAIN

Terminal Position :

Single

Published :

1997

Power Dissipation :

300W

Terminal Finish :

TIN SILVER COPPER

Current - Continuous Drain (Id) @ 25°C :

9A Tc

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Vgs (Max) :

±30V