APT11F80S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation-Max :

337W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

46A

Drain-source On Resistance-Max :

1Ohm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2471pF @ 25V

Packaging :

Tube

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Terminations :

2

Number of Elements :

1

Continuous Drain Current (ID) :

12A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

800V

Vgs (Max) :

±30V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

900m Ω @ 6A, 10V

Terminal Position :

Single

Series :

POWER MOS 8™

Drain to Source Voltage (Vdss) :

800V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Pure Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

245

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

524 mJ

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Pbfree Code :

yes

Additional Feature :

High Reliability