APT10M11JVRU2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Chassis Mount, Screw

Number of Pins :

4

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Rise Time :

48ns

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

16 ns

Avalanche Energy Rating (Eas) :

2500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4

Lead Free :

Lead Free

Continuous Drain Current (ID) :

142A

Factory Lead Time :

36 Weeks

Rds On (Max) @ Id, Vgs :

11m Ω @ 71A, 10V

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Element Configuration :

Single

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Published :

2006

Package / Case :

SOT-227-4, miniBLOC

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Pbfree Code :

yes

Length :

38.2mm

Current - Continuous Drain (Id) @ 25°C :

142A Tc

RoHS Status :

RoHS Compliant

Weight :

30.000004g

Width :

25.4mm

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Power Dissipation :

450W

FET Type :

N-Channel

Packaging :

Bulk

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

450W Tc

Fall Time (Typ) :

9 ns

Pulsed Drain Current-Max (IDM) :

576A

Height :

9.6mm

Turn-Off Delay Time :

51 ns

Drain to Source Voltage (Vdss) :

100V