APT106N60B2C6
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- Mfr.Part #
- APT106N60B2C6
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 106A T-MAX
- Stock
- 45,433
- In Stock ：
- 45,433
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Length :
- 21.46mm
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Resistance :
- 35mOhm
- Packaging :
- Tube
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 106A Tc
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 277 ns
- Width :
- 16.26mm
- Power Dissipation :
- 833W
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 53A, 10V
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 308nC @ 10V
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 164 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 106A
- Power Dissipation-Max :
- 833W Tc
- Package / Case :
- TO-247-3 Variant
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 2200 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 8390pF @ 25V
- Series :
- CoolMOS™
- Rise Time :
- 79ns
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Turn On Delay Time :
- 25 ns
- Factory Lead Time :
- 24 Weeks
- Published :
- 1997
- Lead Free :
- Lead Free
- Height :
- 5.31mm
- Vgs(th) (Max) @ Id :
- 3.5V @ 3.4mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 days ago)
- DS Breakdown Voltage-Min :
- 600V
- Vgs (Max) :
- ±20V
- Datasheets
- APT106N60B2C6
N-Channel Tube 35m Ω @ 53A, 10V ±20V 8390pF @ 25V 308nC @ 10V 600V TO-247-3 Variant
APT106N60B2C6 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2200 mJ.The maximum input capacitance of this device is 8390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 106A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 277 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APT106N60B2C6 Features
the avalanche energy rating (Eas) is 2200 mJ
a continuous drain current (ID) of 106A
the turn-off delay time is 277 ns
a 600V drain to source voltage (Vdss)
APT106N60B2C6 Applications
There are a lot of Microsemi Corporation
APT106N60B2C6 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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