APT100M50J

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

960W

Rds On (Max) @ Id, Vgs :

38m Ω @ 75A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

3350 mJ

Current Rating :

100A

Fall Time (Typ) :

90 ns

Terminal Form :

UNSPECIFIED

Pin Count :

4

Vgs(th) (Max) @ Id :

5V @ 5mA

Radiation Hardening :

No

Packaging :

Tube

Voltage - Rated DC :

500V

Lead Free :

Lead Free

Pbfree Code :

yes

FET Type :

N-Channel

Turn-Off Delay Time :

280 ns

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

620nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Rise Time :

125ns

Mount :

Chassis Mount, Screw

Package / Case :

SOT-227-4, miniBLOC

Input Capacitance (Ciss) (Max) @ Vds :

24600pF @ 25V

Number of Pins :

4

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

105 ns

Length :

38.2mm

Drain-source On Resistance-Max :

0.036Ohm

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Power Dissipation-Max :

960W Tc

Height :

9.6mm

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

500V

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4

Mounting Type :

Chassis Mount

Element Configuration :

Single

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Vgs (Max) :

±30V

Case Connection :

Isolated

Continuous Drain Current (ID) :

100A

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

103A Tc

Transistor Element Material :

SILICON

Weight :

30.000004g

Width :

25.4mm