APT100F50J
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- Mfr.Part #
- APT100F50J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 103A ISOTOP
- Stock
- 43,786
- In Stock ：
- 43,786
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation :
- 960W
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 90 ns
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- DS Breakdown Voltage-Min :
- 500V
- Turn On Delay Time :
- 105 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 103A
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 75A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 620nC @ 10V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 24600pF @ 25V
- Rise Time :
- 125ns
- Series :
- POWER MOS 8™
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Form :
- UNSPECIFIED
- Factory Lead Time :
- 22 Weeks
- Turn-Off Delay Time :
- 280 ns
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Published :
- 1997
- Mount :
- Chassis Mount, Screw
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 3350 mJ
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED
- Power Dissipation-Max :
- 960W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.038Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 103A Tc
- Mounting Type :
- Chassis Mount
- Radiation Hardening :
- No
- Datasheets
- APT100F50J
N-Channel Tube 36m Ω @ 75A, 10V ±30V 24600pF @ 25V 620nC @ 10V 500V SOT-227-4, miniBLOC
APT100F50J Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3350 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 24600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 103A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 280 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 105 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT100F50J Features
the avalanche energy rating (Eas) is 3350 mJ
a continuous drain current (ID) of 103A
the turn-off delay time is 280 ns
a 500V drain to source voltage (Vdss)
APT100F50J Applications
There are a lot of Microsemi Corporation
APT100F50J applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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