APT10045B2LLG
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- Mfr.Part #
- APT10045B2LLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 23A T-MAX
- Stock
- 8,640
- In Stock ：
- 8,640
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Voltage - Rated DC :
- 1kV
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain-source On Resistance-Max :
- 0.45Ohm
- Continuous Drain Current (ID) :
- 23A
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Current Rating :
- 23A
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Published :
- 1997
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- TIN SILVER COPPER
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- POWER MOS 7®
- Number of Pins :
- 3
- Rise Time :
- 5ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 92A
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 11.5A, 10V
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 154nC @ 10V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4350pF @ 25V
- Power Dissipation-Max :
- 565W Tc
- Package / Case :
- TO-247-3 Variant
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 10 ns
- Factory Lead Time :
- 22 Weeks
- Turn-Off Delay Time :
- 30 ns
- Power Dissipation :
- 565W
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Transistor Element Material :
- SILICON
- Datasheets
- APT10045B2LLG
N-Channel Tube 450m Ω @ 11.5A, 10V ±30V 4350pF @ 25V 154nC @ 10V 1000V TO-247-3 Variant
APT10045B2LLG Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4350pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 92A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT10045B2LLG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 23A
the turn-off delay time is 30 ns
based on its rated peak drain current 92A.
a 1000V drain to source voltage (Vdss)
APT10045B2LLG Applications
There are a lot of Microsemi Corporation
APT10045B2LLG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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