AON2810

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Published :

2011

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

2A

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 15V

Power - Max :

2.5W

Max Power Dissipation :

2.5W

Package / Case :

6-WDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

44m Ω @ 2A, 10V

Continuous Drain Current (ID) :

2A

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE