AON2260

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

426pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Number of Elements :

1

Factory Lead Time :

18 Weeks

JESD-30 Code :

S-PDSO-N6

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.8W Ta

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6A Ta

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Dual

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.044Ohm

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

30A

Continuous Drain Current (ID) :

6A

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Published :

2011

Rds On (Max) @ Id, Vgs :

44m Ω @ 6A, 10V

Number of Terminations :

6