ALD111933SAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

6.9mA

Max Power Dissipation :

500mW

Number of Terminations :

8

ECCN Code :

EAR99

Series :

EPAD®

Published :

2006

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

500 Ω @ 5.9V

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

Drain to Source Breakdown Voltage :

10V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

10 ns

Packaging :

Tube

FET Feature :

Standard

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Operating Temperature :

0°C~70°C TJ

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual) Matched Pair

Vgs(th) (Max) @ Id :

3.35V @ 1μA

Reach Compliance Code :

Unknown

Mount :

Surface Mount

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Number of Pins :

8

Power Dissipation :

500mW

Gate to Source Voltage (Vgs) :

10.6V