ALD1107PBL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

0°C~70°C TJ

Power Dissipation :

500mW

Package / Case :

14-DIP (0.300, 7.62mm)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

10.6V

Rds On (Max) @ Id, Vgs :

1800 Ω @ 5V

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

FET Type :

4 P-Channel, Matched Pair

Drain to Source Breakdown Voltage :

-12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

14

Number of Elements :

4

Configuration :

COMMON SUBSTRATE, 4 ELEMENTS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Packaging :

Tube

Mount :

Through Hole

Reach Compliance Code :

Unknown

Number of Pins :

14

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

-13.2V

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 5V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 1μA

Continuous Drain Current (ID) :

2mA

Published :

2012

Max Power Dissipation :

500mW