ALD111933PAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Through Hole

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Dual

Operating Temperature :

0°C~70°C TJ

FET Feature :

Standard

Number of Elements :

2

Max Power Dissipation :

500mW

Factory Lead Time :

8 Weeks

Package / Case :

8-DIP (0.300, 7.62mm)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual) Matched Pair

Power Dissipation :

500mW

Continuous Drain Current (ID) :

6.9mA

Rds On (Max) @ Id, Vgs :

500 Ω @ 5.9V

ECCN Code :

EAR99

Number of Terminations :

8

Number of Pins :

8

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

10.6V

Vgs(th) (Max) @ Id :

3.35V @ 1μA

Mount :

Through Hole

Drain to Source Breakdown Voltage :

10V

Turn-Off Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Series :

EPAD®

Operating Mode :

ENHANCEMENT MODE