ALD1117PAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

500mW

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Operating Temperature :

0°C~70°C TJ

Drain to Source Voltage (Vdss) :

10.6V

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

1800 Ω @ 5V

Published :

2005

Number of Elements :

2

Continuous Drain Current (ID) :

2mA

Number of Pins :

8

Package / Case :

8-DIP (0.300, 7.62mm)

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 5V

Gate to Source Voltage (Vgs) :

-13.2V

Pbfree Code :

yes

Mounting Type :

Through Hole

Mount :

Through Hole

Configuration :

COMMON SUBSTRATE, 2 ELEMENTS

Transistor Application :

SWITCHING

Packaging :

Tube

Max Power Dissipation :

500mW

FET Type :

2 P-Channel (Dual) Matched Pair

Drain to Source Breakdown Voltage :

-12V

Vgs(th) (Max) @ Id :

1V @ 1μA