ALD1110EPAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual) Matched Pair

Max Power Dissipation :

600mW

Operating Temperature :

0°C~70°C TJ

Number of Pins :

8

Mounting Type :

Through Hole

Drain to Source Resistance :

500Ohm

Power - Max :

600mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

3A

Power Dissipation :

600mW

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

Input Capacitance :

2.5pF

Published :

2003

Min Operating Temperature :

0°C

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

8-PDIP

Rds On Max :

500 Ω

Drain to Source Breakdown Voltage :

10V

Drain to Source Voltage (Vdss) :

10V

Max Operating Temperature :

70°C

Vgs(th) (Max) @ Id :

1.01V @ 1μA

Package / Case :

8-DIP (0.300, 7.62mm)

FET Feature :

Standard

Series :

EPAD®

Rds On (Max) @ Id, Vgs :

500Ohm @ 5V