ALD110802SCL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

Drain to Source Breakdown Voltage :

10V

Power - Max :

500mW

Operating Temperature :

0°C~70°C TJ

FET Type :

4 N-Channel, Matched Pair

Gate to Source Voltage (Vgs) :

10.6V

Factory Lead Time :

8 Weeks

Min Operating Temperature :

0°C

Turn-Off Delay Time :

10 ns

Max Operating Temperature :

70°C

RoHS Status :

ROHS3 Compliant

Number of Pins :

16

Continuous Drain Current (ID) :

12mA

Vgs(th) (Max) @ Id :

220mV @ 1μA

Series :

EPAD®

Rds On Max :

500 Ω

Published :

2005

Drain to Source Voltage (Vdss) :

10.6V

Packaging :

Tube

Drain to Source Resistance :

500Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

2.5pF

Mounting Type :

Surface Mount

Mount :

Surface Mount

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

16-SOIC

Power Dissipation :

500mW

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

500Ohm @ 4.2V

Max Power Dissipation :

500mW