ALD1107SBL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

500mW

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

10.6V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 5V

Rds On (Max) @ Id, Vgs :

1800 Ω @ 5V

Drain to Source Breakdown Voltage :

-12V

Terminal Position :

Dual

Continuous Drain Current (ID) :

2mA

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

COMMON SUBSTRATE, 4 ELEMENTS

Max Power Dissipation :

500mW

FET Type :

4 P-Channel, Matched Pair

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

0°C~70°C TJ

Number of Terminations :

14

Gate to Source Voltage (Vgs) :

-13.2V

Vgs(th) (Max) @ Id :

1V @ 1μA

Mount :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Package / Case :

14-SOIC (0.154, 3.90mm Width)

Reach Compliance Code :

Unknown

Published :

2005

Number of Pins :

14

Packaging :

Tube

FET Feature :

Standard

RoHS Status :

ROHS3 Compliant

Number of Elements :

4